New semiconductor driver with J-FET in the amplification stage. The custom-made, low-noise dual FET is low-noise.
The power transistor array with effective heat dissipation through a large-sized heat sink
Hand selected matching FET
High-definition film capacitors are used
Bypass volume control switch
Volume control is EMI shielded
Switchable RCA and XLR inputs. RCA parallel out.
The newly developed large-sized aluminum insulator combined with new vibration-proof material and high frictional coefficient (grip power) have been employed.
Rear Panel
Specifications
Type: All-stage FET configuration DC amplification driver unit
Frequency response: DC – 100kHz (with one SR-009S)
Gain: 60dB
Harmonic distortion: 0.01% or less (1kHz/100Vrms output)
Input impedance: 50kΩ (RCA), 50kΩx 2 (XLR)
Maximum output voltage: 450Vrms (1kHz)
Bias voltage: PRO 580V
Operating temperature / humidity: 0 to 35 degrees C / less than 90% (non condensing)
Input terminal: RCA x 1, XLR x 1
Output: RCA parallel output terminal
Power consumption: 46W
Dimension: 240W x 103 H x 393 D mm (maximum protruding portion included)
Weight: 6.3kg